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| Transistor 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q q 1.5 R0.9 R0.9 0.85 0.550.1 0.450.05 1.250.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings 60 50 7 200 100 400 150 -55 ~ +150 Unit V V V mA mA mW C C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob * Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = -2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 1 1 4.10.2 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.00.1 R 0. 4.50.1 7 Unit A A V V V 60 50 7 160 0.3 150 3.5 460 0.5 VCE(sat) V MHz pF *h FE Rank classification Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 hFE Rank 1 Transistor PC -- Ta 500 60 Ta=25C IB=160A 50 1000 2SD637 IC -- VCE 1200 VCE=10V Ta=25C IB -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 400 40 Base current IB (A) 140A 120A 100A 30 80A 20 60A 40A 10 20A 800 300 600 200 400 100 200 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC -- VBE 200 VCE=10V 200 240 VCE=10V Ta=25C IC -- I B Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) -- IC IC/IB=10 Collector current IC (mA) Collector current IC (mA) 160 160 120 25C Ta=75C 80 -25C 120 80 25C Ta=75C -25C 40 40 0 0 0.4 0.8 1.2 1.6 2.0 0 0 200 400 600 800 1000 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base current IB (A) Collector current IC (mA) hFE -- IC 600 VCE=10V 300 fT -- I E 12 Cob -- VCB Collector output capacitance Cob (pF) VCB=10V Ta=25C IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 240 10 400 Ta=75C 25C 8 180 300 -25C 6 120 200 4 100 60 2 0 0.1 0.3 1 3 10 30 100 0 - 0.1 - 0.3 0 -1 -3 -10 -30 -100 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor NV -- IC 240 VCE=10V Ta=25C Function=FLAT 100 2SD637 h Parameter -- IC VCE=5V f=270Hz 200 30 Noise voltage NV (mV) 120 Rg=100k h Parameter 160 10 hfe (!100) 3 80 22k 40 4.7k 1 hoe (10-1S) hre (!10-4) 0.3 hie (!10k) 0 10 30 100 300 1000 0.1 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (mA) 3 |
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